Materials & Technologies for Future Electronics
Materials & Technologies for Future Electronics
Led by Lain-Jong (Lance) Li
Moving from HKU to NUS Singapore
Led by Lain-Jong (Lance) Li
Moving from HKU to NUS Singapore
2024
Engineering grain boundaries in monolayermolybdenum disulfide for efficient water/ion separation. Jie Shen, Areej Aljarb, Yichen Cai, Xing Liu,Jiacheng Min, Yingge Wang, Qingxiao Wang, Chenhui Zhang, Cailing Chen, Mariam Hakami, Jui-Han Fu, Hui Zhang, Guanxing Li, Xiaoqian Wang, Zhuo Chen, Jiaqiang Li, Xinglong Dong Kaimin Shih, Kuo-Wei Huang, Vincent Tung*, Guosheng Shi*, Ingo Pinnau*, Lain-Jong Li*, and Yu Han*
Science (under revision)
DirectlyProbing Carrier Injection Length in Contacts of Two-Dimensional Transistors. Zi-Liang Yang, Bo-Chao Huang, Yi Wan, Kai-WeiTseng, Shu-Ting Yang, Han-Chieh Lo, Fangyuan Zheng, Ni Yang, Wanqing Meng, Jiacheng Min, Po-Cheng Huang, Yann-Wen Lan*, Lain-Jong Li*& Ya-Ping Chiu*
Nature (under revision)
Bridging themobility gap in WSe2 by defect control. Hang Liu, Ni Yang, Jiacheng Min, Mykolya Telychko, Caisheng Tang, Yi Wan, Chuanqi Zhang, Wanying Li, Zhengwei Zhang, Xiangdong Yang, George Harrison, Zhongzhe Liu, Tianchao Guo, Jing-kai Huang, Shadi Fatayer, Kaimin Shih, Song Liu, Thomas D. Anthopoulos, Kian Ping Loh*, Lain-jong Li*, and Xu Lu*
Nature Electronics (under revision)
Revisiting theEpitaxial Growth Mechanism of 2D TMDC Single Crystal. Chenyang Li, Fangyuan Zheng, Jiacheng Min, NiYang, Yu‐Ming Chang, Haomin Liu,Yuxiang Zhang, Pengfei Yang, Qinze Yu, Yu Li, Zhengtang Luo, Areej Aljarb, Kaimin Shih, Jing‐KaiHuang, Lain‐Jong Li*, Yi Wan*
Advanced Materials (2024) https://doi.org/10.1002/adma.202404923
MXene-FiberComposite Membranes for Permeable and Biocompatible Skin-Interfaced Iontronic Mechanosensing. Yichen Cai, Jie Shen, Nan Yang, Zhuo Chen, Yi Wan, Yu-Hsiang Chiang, Liang Ying Ee, Yingge Wang, Vincent Tung, Yu Han, Ingo Pinnau, Kuo-Wei Huang, Lain-jong Li*, Xiaochen Dong*
Nano Lett. (2024) 24, 39, 12333–12342
MicroscopicCharacterizations for 2D Material-based Advanced Electronics. Fang-Yuan Zheng & Lain-Jong Li*
Micron (2024) https://doi.org/10.1016/j.micron.2024.103707
Projectedperformance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes. Yu-Cheng Lu, Jing-Kai Huang, Kai-Yuan Chao, Lain-Jong Li* & Vita Pi-Ho Hu*
Nature Nanotechnology(2024). https://doi.org/10.1038/s41565-024-01693-3
PhotoprogrammedMultifunctional Optoelectronic Synaptic Transistor Arrays Based on Photosensitive Polymer‐SortedSemiconducting Single‐Walled CarbonNanotubes for Image Recognition, Nianzi Sui; Yixi Ji; MinLi; Fanyuan Zheng; Shuangshuang Shao; Jiaqi Li; Zhaoxin Liu; Jinjian Wu; Jianwen Zhao*; Lain‐Jong Li*
Advanced Science (2024) DOI: 10.1002/advs.202401794
Sensingfugitive hydrogen emissions, Yichen Cai; Sudipta Chatterjee; Khaled N. Salama; Lain-Jong Li; Kuo-Wei Huang
Nature Reviews Electrical Engineering (2024) DOI: 10.1038/s44287-024-00039-4
Self-trappedexciton emission in highly polar hydronium-based perovskite triggered by antimony doping. B. Zhou#, F.Fang#, Z. Liu, H. Zhong, K. Zhou, H. Hu, J. Min, S. Fan, J. Nie, J.-K. Huang, L.-J. Li, H. Li*, Y. Wan*,Y. Shi*.
Journal of the American Chemical Society (2024) 146, 22, 15198–15208.
Identifyingatomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study Hengze Qu, ShengliZhang, Jiang Cao, Zhenhua Wu, YangChai, Weisheng Li, Lain-Jong Li, Wencai Ren, Xinran Wang, Haibo Zeng
Science Bulletin (2024), 69(10), 1427-14362023
Atomically Thin Decoration Layers for RobustOrientation Control of 2D Transition Metal Dichalcogenides.
Y.-M. Chang, N.Yang, J. Min, F. Zheng, C.-W. Huang, J.-Y. Chen, Y. Zhang, P. Yang, C. Li,
H.-Y. Liu, B. Ye, J. Xu, H.-Y. Chen, Z. Luo, W.-W. Wu,K. Shih, J.-K. Huang, L.-J. Li*, Y. Wan*.
Advanced Functional Materials (2023) 2311387.Cascadedcompression of size distribution of nanopores in monolayer graphene, JiangtaoWang, Chi Cheng, Xudong Zheng, Juan Carlos Idrobo, Ang-Yu Lu, Ji-Hoon Park,
Bong Gyu Shin, Soon Jung Jung, Tianyi Zhang, Haozhe Wang, Guanhui Gao, Bongki
Shin, Xiang Jin, Long Ju, Yimo Han, Lain-Jong Li, Rohit Karnik & Jing Kong.
Nature (2023) 623, pages956–963
Bi2O2Se-Based Bimode Noise Generator for the Application of Generative Adversarial Networks
Bo Liu, XingYi Zheng, Dharmendra Verma, Yudi Zhao, Hanyuan Liang, Lain-Jong Li, Jenhui Chen, Chao-Sung Lai
ACS Applied Materials & Interfaces, 15(42), 49478-49486.
Semiconductor structure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers
Shin-Wei Shen, CHEN Tse-An, Tung-Ying Lee, Lain-Jong Li
U.S. Patent 11,784,225[P]. 2023-10-10.
Semiconductordevice with two-dimensional materials
CHEN Tse-An, Lain-Jong Li
Method ofmanufacturing semiconductor devices including the steps of removing a plurality of spacers that surrounds each of the plurality of nanotubes into a layer of nanotubes, and forming gate dielectric and/or gate electrode.
Tzu-AngChaoGregory Michael PitnerTse-An CHENLain-Jong LiYu Chao Lin
U.S. Patent 11,749,528[P]. 2023-9-5.
Pieces of 2Dmaterials: The next step to crystallize the polycrystalline domains
Jui-Han Fu, YichenCai, Jie Shen, Hayato Sugisaki, Kohei Nanjo, Karin To, Chia-Wen Wu, Yu Han, Lain-Jong Li, Vincent Tung
Matter (2023) https://doi.org/10.1016/j.matt.2023.05.034
InterfacialReconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides
Areej Aljarb*,Jiacheng Min, Mariam Hakami, Jui-Han Fu, Rehab Albaridy, Yi Wan, Sergei Lopatin, Dimitrios Kaltsas, Dipti Naphade, Emre Yengel, Mohamed Nejib Hedhili, Roaa Sait, Abdul-Hamid Emwas, Arwa Kutbee, Merfat Alsabban, Kuo-Wei Huang, Kaimin Shih, Leonidas Tsetseris, Thomas D. Anthopoulos, Vincent Tung*, and Lain-Jong Li*
ACS Nano (2023) https://doi.org/10.1021/acsnano.2c12103
Area-SelectiveGrowth of Two-Dimensional Mono- And Bilayer WS2 for Field Effect Transistors
Lin-Yun Huang,Ming-Yang Li, San-Lin Liew, Shih-Chu Lin, Ang-Sheng Chou, Ming-Chun Hsu,
Ching-Hao Hsu, Yu-Tung Lin, Po-Sen Mao, Duen-Huei Hou, Wei-Cheng Liu, ChihI Wu, Wen-Hao Chang, Han Wang, Lain-Jong Li*, and Kung-Hwa Wei*ACS Materialsletter (2023) https://doi.org/10.1021/acsmaterialslett.3c00094
Engineering grainboundaries in monolayer molybdenum disulfide for an efficient water/ion separation
Yu Han, Jie Shen,Areej Aljarb, Yichen Cai, Xing Liu, Jiacheng Min, Yingge Wang, Chenhui Zhang, Cailing Chen, Marim Hakami, Jui-Han Fu, Hui Zhang, Guanxing Li, Xiaoqian Wang, Zhuo Chen, Jiaqiang Li, Xinglong Dong, Vincent Tung, Guosheng Shi, Ingo Pinnau, Lain-Jong Li
Research SquarePlatform LLC (2023) https://doi.org/10.21203/rs.3.rs-2630063/v1
Semiconductordevice and manufacturing method thereof
Ming-Yang Li,Lain-Jong Li, YEH Han, Wen-hao Chang
Semiconductorstructure, method of forming stacked unit layers and method of forming stacked two-dimensional material layers
Shin-Wei Shen,CHEN Tse-An, Tung-Ying Lee, Lain-Jong Li
Field effecttransistor using transition metal dichalcogenide and a method for forming the same
MY Li, LJ Li, CChih-Piao
Epitaxialsubstitution of metal iodides for low-temperature growth of two-dimensional metal chalcogenides
Kenan Zhang,Yihong She, Xiangbin Cai, Mei Zhao, Zhenjing Liu, Changchun Ding, Lijie Zhang, Wei Zhou, Jianhua Ma, Hongwei Liu, Lain-Jong Li, Zhengtang Luo, Shaoming Huang
Nature Nanotechnology (2023) https://doi.org/10.1038/s41565-023-01326-1
Oriented lateralgrowth of two-dimensional materials on c-plane sapphire
Jui-Han Fu,Jiacheng Min, Che-Kang Chang, Chien-Chih Tseng, Qingxiao Wang, Hayato Sugisaki, Chenyang Li, Yu-Ming Chang, Ibrahim Alnami, Wei-Ren Syong, Ci Lin, Feier Fang, Lv Zhao, Tzu-Hsuan Lo, Chao-Sung Lai, Wei-Sheng Chiu, Zih-Siang Jian, Wen-Hao Chang,
Yu-Jung Lu, KaiminShih, Lain-Jong Li, Yi Wan, Yumeng Shi & Vincent Tung
NatureNanotechnology (2023) https://doi.org/10.1038/s41565-023-01445-9
2022
Fast water transport and molecular sieving through ultrathin ordered conjugated-polymer-framework membranes
Jie Shen, Yichen Cai, Chenhui Zhang, Wan Wei, Cailing Chen, Lingmei Liu, Kuiwei Yang, Yinchang Ma, Yingge Wang, Chien-Chih Tseng, Jui-Han Fu, Xinglong Dong, Jiaqiang Li, Xi-Xiang Zhang, Lain-Jong Li, Jianwen Jiang, Ingo Pinnau, Vincent Tung & Yu HanNature Materials (2022) doi.org/10.1038/s41563-022-01325-y
Low-defect-density WS2 by hydroxide vapor phase deposition
Yi Wan, En Li, Zhihao Yu, Jing-Kai Huang, Ming-Yang Li, Ang-Sheng Chou, Yi-Te Lee, Chien-Ju Lee, Hung-Chang Hsu, Qin Zhan, Areej Aljarb, Jui-Han Fu, Shao-Pin Chiu, Xinran Wang, Juhn-Jong Lin, Ya-Ping Chiu, Wen-Hao Chang, Han Wang, Yumeng Shi, Nian Lin, Yingchun Cheng, Vincent Tung & Lain-Jong LiNature Communications (2022) DOI 10.1038/s41467-022-31886-0
Direct Band Gap in Multilayer Transition Metal Dichalcogenide Nanoscrolls with Enhanced Photoluminescence
Ci Lin, Liang Cai, Jui-Han Fu, Shahid Sattar, Qingxiao Wang, Yi Wan, Chien-Chih Tseng, Chih-Wen Yang, Areej Aljarb, Ke Jiang, Kuo-Wei Huang, Lain-Jong Li, Carlo Maria Canali, Yumeng Shi, and Vincent Tung
ACS Materials Lett. 2022, 4, 8, 1547–1555
Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2 TransistorMing-Yang Li, Ching-Hao Hsu, Shin-Wei Shen, Ang-Sheng Chou, Yuxuan Cosmi Lin, Chih-Piao Chuu, Ning Yang, Sui-An Chou, Lin-Yun Huang, Chao-Ching Cheng, Wei-Yen Woon, Szuya Liao, Chih-I Wu, Lain-Jong Li, Iuliana Radu, H-S Philip Wong, Han Wang
Electric-field-induced metal-insulator transition and quantum transport in large-area polycrystalline MoS2 monolayers
Hao Ou; Tomoyuki Yamada; Masaya Mitamura; Yusuke Edagawa; Tatsuma D. Matsuda; Kazuhiro Yanagi; Chang-Hsiao Chen; Lain-Jong Li; Taishi Takenobu; Jiang Pu.Physical Review Materials (2022) DOI: 10.1103/PhysRevMaterials.6.064005
Directly Visualizing Photoinduced Renormalized Momentum-Forbidden Electronic Quantum States in an Atomically Thin Semiconductor
HY Chen, HC Hsu, CC Huang, MY Li, LJ Li, YP Chiu
ACS nano (2022) 10.1021/acsnano.2c02981Nanoscale Electronic Transparency of Wafer-Scale Hexagonal Boron Nitride
Caleb Z. Zerger; Linsey K. Rodenbach; Yi-Ting Chen; Benjamin Safvati; Morgan Z. Brubaker; Steven Tran; Tse-An Chen; Ming-Yang Li; Lain-Jong Li; David Goldhaber-Gordon et al.
Nano Letters (2022) DOI: 10.1021/acs.nanolett.1c04274High-κ perovskite membranes as insulators for two-dimensional transistors JK Huang, Y Wan, J Shi, J Zhang, Z Wang, W Wang, N Yang, Y Liu, ...
Nature 605 (7909), 262-267 2022Bi2O2Se-Based True Random Number Generator for Security Applications
Bo Liu; Ying-Feng Chang; Juzhe Li; Xu Liu; Le An Wang; Dharmendra Verma; Hanyuan Liang; Hui Zhu; Yudi Zhao; Lain-Jong Li et al.ACS nano (2022) DOI: 10.1021/acsnano.2c01784
Alloy-buffer-controlled van der Waals epitaxial growth of aligned tellurene
Wang, C.; Xu, C.; Guo, X.; Zhang, N.; Yan, J.; Chen, J.; Yu, W.; Qin, J.-K.; Zhu, Y.; Li, L.-J. et alNano Research DOI: 10.1007/s12274-022-4188-7
Unusual Activity of Rationally Designed Cobalt Phosphide/Oxide Heterostructure Composite for Hydrogen Production in Alkaline Medium
MM Alsabban, MK Eswaran, K Peramaiah, W Wahyudi, X Yang, ...
ACS nano 16 (3), 3906-3916 2022
Two-Dimensional Cs2AgBiBr6/WS2 Heterostructure-Based Photodetector with Boosted Detectivity via Interfacial Engineering
F Fang, Y Wan, H Li, S Fang, F Huang, B Zhou, K Jiang, V Tung, LJ Li, ...
ACS nano 16 (3), 3985-3993 3 20222D Materials‐Based Static Random‐Access Memory
Chang‐Ju Liu; Yi Wan; Lain‐Jong Li; Chih‐Pin Lin; Tuo‐Hung Hou; Zi‐Yuan Huang; Vita Pi‐Ho HuAdvanced Materials (2022) DOI: 10.1002/adma.202107894
Liquid-phase catalytic growth of graphene
Tian, P.; Tang, L.; Xiang, J.; Lau, S.P.; Yuan, S.; Yang, D.; Li, L.-J.; Teng, K.S.
Journal of Materials Chemistry C DOI: 10.1039/d1tc04187hBi2O2Se-Based Integrated Multifunctional Optoelectronics
D Verma, B Liu, TC Chen, LJL Li, CS Lai
Nanoscale Adv. DOI: 10.1039/D2NA00245K
Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth
Y Wan, JH Fu, CP Chuu, V Tung, Y Shi, LJ Li
Chemical Society Reviews (2022),51, 803-8112021
Two‐Dimensional Materials‐Based Static Random‐Access Memory
CJ Liu, Y Wan, LJ Li, CP Lin, TH Hou, ZY Huang, VPH Hu
Advanced Materials, 2107894 2021
Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors
Y Lin, PC Shen, C Su, AS Chou, T Wu, CC Cheng, JH Park, MH Chiu, ...
2021 IEEE International Electron Devices Meeting (IEDM), 37.2. 1-37.2. 4 2021
Performance Limits and Potential of Multilayer Graphene–Tungsten Diselenide Heterostructures
SH Yang, FS Yang, HL Tang, MH Chiu, KC Lee, M Li, CY Lin, LJ Li, ...
Advanced Electronic Materials 7 (12), 2100355 2021
Transistors based on two-dimensional materials for future integrated circuits
S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ...
Nature Electronics 4 (11), 786-799 14 2021Precision Chemistry in Two-Dimensional Materials: Adding, Removing, and Replacing the Atoms at Will
T Yang, LJ Li, J Zhao, TH Ly
Accounts of Materials Research 2 (10), 863-868 2021
Bottom-Up Synthesized All-Thermal-Catalyst Aerogels for Heat-Regenerative Air Filtration
X Ji, J Zhao, SM Jung, AIH Hrdina, MJ Wolf, Xiulin Yang, Geoffrey Vaartstra, Helen Xie, Shao-Xiong Lennon Luo, Ang-yu Lu, Roy E. Welsch, Evelyn N. Wang, Lain-Jong Li, and Jing Kong
Nano Letters 21 (19), 8160-8165 1 2021
The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening
S Park, T Schultz, D Shin, N Mutz, A Aljarb, Hee Seong Kang, Chul-Ho Lee, Lain-Jong Li, Xiaomin Xu, Vincent Tung, Emil J. W. List-Kratochvil, Sylke Blumstengel, Patrick Amsalem, and Norbert Koch
ACS nano 15 (9), 14794-14803 2 2021Spatial Control of Dynamic p–i–n Junctions in Transition Metal Dichalcogenide Light-Emitting Devices
H Ou, H Matsuoka, J Tempia, T Yamada, T Takahashi,Koshi Oi, Yuhei Takaguchi, Takahiko Endo, Yasumitsu Miyata, Chang-Hsiao Chen, Lain-Jong Li, Jiang Pu, and Taishi Takenobu
ACS nano 15 (8), 12911-12921 1 2021Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
Chun-Yi Chou, Wei-Hao Lee, Chih-Piao Chuu, Tse-An Chen, Cheng-Hung Hou, Yu-Tung Yin, Ting-Yun Wang, Jing-Jong Shyue, Lain-Jong Li, and Miin-Jang Chen
Chemistry of Materials 33 (14), 5584-5590 1 2021
Temperature‐Dependent Electronic Ground‐State Charge Transfer in van der Waals Heterostructures
Soohyung Park,Haiyuan Wang,Thorsten Schultz,Dongguen Shin,Ruslan Ovsyannikov,Marios Zacharias,Dmitrii Maksimov,Matthias Meissner,Yuri Hasegawa,Takuma Yamaguchi,Satoshi Kera,Areej Aljarb,Mariam Hakami,Lain-Jong Li,V incent Tung,Patrick Amsalem,Mariana Rossi,Norbert Koch
Advanced Materials 33 (29), 2008677 4 2021Lithium‐Ion Desolvation Induced by Nitrate Additives Reveals New Insights into High Performance Lithium Batteries
W Wahyudi, V Ladelta, L Tsetseris, MM Alsabban, X Guo, E Yengel, ...
Advanced Functional Materials 31 (23), 2101593 19 2021
Type‐I Energy Level Alignment at the PTCDA—Monolayer MoS2 Interface Promotes Resonance Energy Transfer and Luminescence Enhancement
S Park, N Mutz, SA Kovalenko, T Schultz, D Shin, A Aljarb, LJ Li, V Tung, ...
Advanced Science 8 (12), 2100215 2 2021
Giant Ferroelectric Resistance Switching Controlled by a Modulatory Terminal for Low‐Power Neuromorphic In‐Memory Computing
F Xue, X He, Z Wang, JRD Retamal, Z Chai, L Jing, C Zhang, H Fang, ...
Advanced Materials 33 (21), 2008709 17 2021
Ultralow contact resistance between semimetal and monolayer semiconductors
PC Shen, C Su, Y Lin, AS Chou, CC Cheng, JH Park, MH Chiu, AY Lu, ...
Nature 593 (7858), 211-217 129 2021
Layered semiconducting 2D materials for future transistor applications
SK Su, CP Chuu, MY Li, CC Cheng, HSP Wong, LJ Li
Small Structures 2 (5), 2000103 33 2021
Strain-directed layer-by-layer epitaxy toward van der Waals homo-and heterostructures
Y Wan, JK Huang, CP Chuu, WT Hsu, CJ Lee, A Aljarb, CW Huang, ...
ACS Materials Letters 3 (4), 442-453 3 2021
Towards High-Performance Monolayer Semiconductor Transistors with Semimetallic Ohmic Contact
Y Lin, C Su, PC Shen, AS Chou, CC Cheng, JH Park, MH Chiu, AY Lu, ...
Bulletin of the American Physical Society 66 2021
Bi2O2Se-Based Memristor-Aided Logic
B Liu, Y Zhao, D Verma, LA Wang, H Liang, H Zhu, LJ Li, TH Hou, CS Lai
ACS Applied Materials & Interfaces 13 (13), 15391-15398 4 2021
Selective Conversion of Carbon Dioxide to Formate with High Current Densities
X Yang, D Liu, S Zhong, X Zhou, KW Huang, LJ Li, Z Lai
Journal of Molecular and Engineering Materials 9 (01n02), 2150001 2021
Atomic-Layer Controlled Interfacial Band Engineering at Two-Dimensional Layered PtSe2/Si Heterojunctions for Efficient Photoelectrochemical Hydrogen Production
CC Chung, H Yeh, PH Wu, CC Lin, CS Li, TT Yeh, Y Chou, CY Wei, ...
ACS nano 15 (3), 4627-4635 10 2021
Optically controlled ferroelectric nanodomains for logic-in-memory photonic devices with simplified structures
F Xue, X He, D Periyanagounder, Z Ji, LJ Li, JH He, X Zhang
IEEE Transactions on Electron Devices 68 (4), 1992-1995 4 2021
One-step synthesis of single-site vanadium substitution in 1T-WS2 monolayers for enhanced hydrogen evolution catalysis
A Han, X Zhou, X Wang, S Liu, Q Xiong, Q Zhang, L Gu, Z Zhuang, ...
Nature communications 12 (1), 1-10 44 2021
Two-dimensional solid-phase crystallization toward centimeter-scale monocrystalline layered MoTe 2 via two-step annealing
CP Lin, HH Hsu, JH Huang, YW Kang, CT Wu, YJ Lee, CC Cheng, ...
Journal of Materials Chemistry C 9 (43), 15566Before 2021
Ledge-directed Epitaxy of Continuous, Self-Aligned and Monolayer TMDs Nanoribbons with Single Crystallinity, A. Ajarb et al.,
Nature Materials 19, 1300–1306(2020)
CVD undoped monolayer MoS2 nFETs with high drain current of 390uA/um at Vds=1V, A.-S. Chou et al.
VLSI (2020)
Pinning-Free Side Contact Monolayer MoS2 FET , Terry Y.T. Hung et al.
IEDM (2020)
Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111), T.-A.Chen, C.-P. CHuu, C-C Tseng, C-K Wen, H.-S. P Wong, S. Pan, R. Li, Y. Zhang, Q. Fu, B. I. Yakobson*, W.-H. Chang*, L-J Li*
Nature 579, 219–223 (2020)
Strain engineering and epitaxial stabilization of halide perovskites, Y. Chen, Y. Lei, Yuheng Li, Yugang Yu, J. Cai, M.-H. Chiu, R. Rao, Y. Gu, C. Wang, W. Choi, H. Hu, C. Wang, Y. Li, J. Song, J. Zhang, B. Qi, M. Lin, Z. Zhang, A. E. Islam, B. Maruyama, S. Dayeh, LJ Li, K. Yang, Y.-H. Lo, Sheng Xu*
Nature 577, 209-215 (2020)
Two dimensional semiconducting materials: Candidates for extending Moore’s Law, SK Su, MY Li, HS Wong, LJ Li*
Nature 567, 169-170. (2019)
Graphene and 2D materials for silicon technology, D. Akinwande, C. Huyghebaert, CH Wang, M. Serna, S. Gooddens, LJ Li, P.Wong, F. Koppens.
Nature 573, 507–518(2019)
Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin. Hsu, W. T., Lin, B. H., Lu, L. S., Lee, M. H., Chu, M. W., Li, L. J., . . . Shih, C. K. (2019).
Science Advances, doi:10.1126/sciadv.aax7407 (2019)
Demonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS2 and molecular dopants. Park, S., Schultz, T., Xu, X., Wegner, B., Aljarb, A., Han, A., . . . Koch, N. (2019).
Communications Physics, doi:10.1038/s42005-019-0212-y (2019)
Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiOx/Si Substrates Using Area-Selective CVD Technology. Chung, Y. Y., Shieh, J. M., Su, S. K., Chiang, H. L., Chen, T. C., Li, L. J., . . . Li, K. S. (2019).
IEEE Transactions on Electron Devices, 66(12), 5381-5386. (2019)
Quasi-Two-Dimensional Se-Terminated Bismuth Oxychalcogenide (Bi2O2Se) Wei, Q., Li, R., Lin, C., Han, A., Nie, A., Li, Y., . . . Huang, W.
ACS Nano, 13(11), 13439-13444 (2019)
Hsu, W. T., Lu, L. S., Wu, P. H., Lee, M. H., Chen, P. J., Wu, P. Y., . . . Chang, W. H. (2018). Negative circular polarization emissions from WSe2/MoSe2 commensurate heterobilayers.
Nature Communications, 9(1). doi:10.1038/s41467-018-03869-7
Zhang Q, Tsai CY, Li LJ, Liaw DJ, Colorless-to-colorful switching electrochromic polyimides with very high contrast ratio.
Nature Communications 10(1):01 Dec 2019
New Insight on the Role of Electrolyte Additives in Rechargeable Lithium Ion Batteries. Ming, J., Cao, Z., Wu, Y., Wahyudi, W., Wang, W., Guo, X., . . . Alshareef, H. N.
ACS Energy Letters, 4(11), 2613-2622. doi:10.1021/acsenergylett.9b01441 (2019)
Synergistic additive-mediated CVD growth and chemical modification of 2D materials. Jiang, J., Li, N., Zou, J., Zhou, X., Eda, G., Zhang, Q., . . . Wee, A. T. S.
Chemical Society Reviews, 48(17), 4639-4654. (2019)
Layer Rotation-Angle-Dependent Excitonic Absorption in Van Der Waals Heterostructures Revealed by Electron Energy Loss Spectroscopy. Gogoi, P. K., Lin, Y. C., Senga, R., Komsa, H. P., Wong, S. L., Chi, D., . . . Suenaga, K.
ACS Nano, 13(8), 9541-9550 (2019).
Growth of 2H stacked WSe2 bilayers on sapphire. Han, A., Aljarb, A., Liu, S., Li, P., Ma, C., Xue, F., . . . Li, L. -J.
Nanoscale Horizons, 4(6), 1434-1442. (2019)
MXene based self-assembled cathode and antifouling separator for high-rate and dendrite-inhibited Li–S battery. Guo, D., Ming, F., Su, H., Wu, Y., Wahyudi, W., Li, M., . . . Lai, Z.
Nano Energy, 61, 478-485. (2019)
Electronic band dispersion determination in azimuthally disordered transition-metal dichalcogenide monolayers. Park, S., Schultz, T., Han, A., Aljarb, A., Xu, X., Beyer, P., . . . Koch, N.
Communications Physics, 2(1). doi:10.1038/s42005-019-0166-0 (2019)
Design and Mechanistic Study of Highly Durable Carbon-Coated Cobalt Diphosphide Core-Shell Nanostructure Electrocatalysts for the Efficient and Stable Oxygen Evolution Reaction. Alsabban, M. M., Yang, X., Wahyudi, W., Fu, J. H., Hedhili, M. N., Ming, J., . . . Huang, K. W.
ACS Applied Materials and Interfaces, 11(23), 20752-20761(2019)
Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric. Xue, F., He, X., Retamal, J. R. D., Han, A., Zhang, J., Liu, Z., . . . Zhang, X.
Advanced Materials, 31(29). doi:10.1002/adma.201901300 (2019)
Point Defects and Localized Excitons in 2D WSe2., Zheng, Y. J., Chen, Y., Huang, Y. L., Gogoi, P. K., Li, M. Y., Li, L. J., . . . Quek, S. Y.
ACS Nano, 13(5), 6050-6059. doi:10.1021/acsnano.9b02316 (2019)
Scalable fabrication of a complementary logic inverter based on MoS2 fin-shaped field effect transistors. Lan, Y. W., Chen, P. C., Lin, Y. Y., Li, M. Y., Li, L. J., Tu, Y. L., . . . Li, K. S.
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